Haruki Fujii

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Speaker, Author, Co-Author

Thu. Mar 16, 2023 4:00 PM - 5:30 PM A301 (Building No. 6)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[16p-A301-7~12] 13.7 Compound and power devices, process technology and characterization

4:00 PM - 4:15 PM

[16p-A301-7] [The 53rd Young Scientist Presentation Award Speech] Deep levels formed near the SiO₂/SiC interface by thermal oxidation of SiC

〇Haruki Fujii¹, Kazutaka Kanegae¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)