Takashi Onaya

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Speaker, Author, Co-Author

Thu. Mar 16, 2023 1:00 PM - 5:45 PM B508 (Building No. 2)

Oral presentation
| 13 Semiconductors
| 13.3 Insulator technology

[16p-B508-1~17] 13.3 Insulator technology

1:45 PM - 2:00 PM

[16p-B508-3] Origin of oxygen vacancy formation originating from ferroelectric Hf_xZr_1−xO₂/TiN interface reaction in fatigued state

〇Takashi Onaya^1,2,3,4, Takahiro Nagata², Toshihide Nabatame², Yoshiyuki Yamashita², Kazuhito Tsukagoshi², Yukinori Morita³, Hiroyuki Ota³, Shinji Migita³, Koji Kita¹ (1.The Univ. of Tokyo, 2.NIMS, 3.AIST, 4.JSPS Research Fellow PD)