2:30 PM - 2:45 PM
[16p-D511-5] Formation of high-Sn-content Ge1−xSnx(111) epitaxial thin layer with high crystallinity
〇Shunsuke Mori1, Shigehisa Shibayama1, Yoshiki Kato2, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,3 (1.Grad. Sch. Eng. Nagoya Univ., 2.Sch. Eng. Nagoya Univ., 3.IMaSS, Nagoya Univ.)