Takumi Ohtsuki

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Speaker, Author, Co-Author

Fri. Mar 17, 2023 9:00 AM - 11:30 AM A301 (Building No. 6)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[17a-A301-1~9] 13.7 Compound and power devices, process technology and characterization

9:45 AM - 10:00 AM

[17a-A301-4] RF Characteristics of Lateral Ga₂O₃ MOSFET with (Al_xGa_1-x)₂O₃ Back Barrier

〇Takumi Ohtsuki¹, Takafumi Kamimura¹, Masataka Higashiwaki^1,2 (1.NICT, 2.Osaka Metropolitan Univ.)