Yoshiki Sakita

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Speaker, Author, Co-Author

Fri. Mar 17, 2023 1:00 PM - 6:00 PM A301 (Building No. 6)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[17p-A301-1~18] 13.7 Compound and power devices, process technology and characterization

1:00 PM - 1:15 PM

△ [17p-A301-1] Location of Gate Leakage of GaN HEMT Observed using Thermal Lock-in Analysis

〇(B)Yoshiki Sakita¹, Hisao Kobayashi², Qiang Ma¹, Hiroto Saito¹, Kenji Osaki¹, Syunsuke Ito¹, Akio Wakejima¹ (1.Nagoya Inst. of Tech., 2.Nippon BARNES)

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