Kensuke Oishi

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Speaker, Author, Co-Author

Fri. Mar 17, 2023 1:00 PM - 6:00 PM A301 (Building No. 6)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[17p-A301-1~18] 13.7 Compound and power devices, process technology and characterization

5:15 PM - 5:30 PM

[17p-A301-16] Improvement of threshold voltage controllability in fabrication of recessed gate GaN HEMTs by introducing etch stop detection layer

〇Kensuke Oishi¹, Hidemasa Takahashi¹, Yuji Ando^1,2, Akio Wakejima³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Inst. of Tech.)