Meguru Endo

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Speaker, Author, Co-Author

Fri. Mar 17, 2023 1:00 PM - 6:00 PM A301 (Building No. 6)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[17p-A301-1~18] 13.7 Compound and power devices, process technology and characterization

2:15 PM - 2:30 PM

△ [17p-A301-6] Characterization of recombination current in homoepitaxial GaN p-n junction diode with N atoms displacement-related defects introduced by electron beam irradiation

〇Meguru Endo¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)