DAISUKE HASEGAWA

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Speaker, Author, Co-Author

Sat. Mar 18, 2023 9:00 AM - 11:30 AM B401 (Building No. 2)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[18a-B401-1~9] 15.4 III-V-group nitride crystals

9:45 AM - 10:00 AM

[18a-B401-4] Selective-area growth of GaN using DC pulse sputtering method

〇DAISUKE HASEGAWA¹, Tatsuya Honda¹, Satoshi Kamiyama², Nobuaki Takahashi³, Hitoshi Miura³, Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Osaka Univ., 2.Meijo Univ., 3.Tokyo Electron.)

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