Shigeyoshi Usami

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Speaker, Author, Co-Author

Sat. Mar 18, 2023 9:00 AM - 11:30 AM B401 (Building No. 2)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[18a-B401-1~9] 15.4 III-V-group nitride crystals

11:00 AM - 11:15 AM

△ [18a-B401-8] Effect of Hydrogen Partial Pressure on GaN Ultra-High-Speed Growth by OVPE Method

〇Shigeyoshi Usami¹, Ritsuko Higashiyama¹, Masayuki Imanishi¹, Junichi Takino², Tomoaki Sumi², Yoshio Okayama², Masashi Yoshimura³, Masahiko Hata⁴, Msashi Isemura⁵, Yusuke Mori¹ (1.Osaka Univ., 2.Panasonic Holdings Corp., 3.ILE, Osaka Univ., 4.Itochu Plastics Inc., 5.Sosho-Ohshin Inc.)

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