[15a-B401-1~7] 15.4 III-V-group nitride crystals

Wed. Mar 15, 2023 9:45 AM - 11:30 AM B401 (Building No. 2)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:45 AM - 10:00 AM

[15a-B401-1] Shape homogenization of GaInN buffer in nanocolumn crystals by the changed nitrogen RF power

〇Hiromi Akagawa¹, Jumpei Yamada^2,3, Tomohiro Yamaguchi¹, Rie Togashi^2,3, Takeyoshi Onuma¹, Ichirou Nomura^2,3, Tohru Honda¹, Katsumi Kishino^2,3 (1.Kogakuin Univ., 2.Sophia Nanotech Center, 3.Sophia Univ.)

10:00 AM - 10:15 AM

[15a-B401-2] Observation of relaxation process in RF-MBE growth of GaInN with
insertion of GaInN buffer layer on GaN using in-situ XRD-RSM

〇(M1)Jo Takeuchi¹, Takuo Sasaki², Haruka Yokoyama¹, Takeyoshi Onuma¹, Tohru Honda¹, Tomohiro Yamaguchi¹, Yasushi Nanishi³ (1.Kogakuin Univ., 2.QST, 3.Ritsumeikan Univ.)

10:15 AM - 10:30 AM

[15a-B401-3] Growth and characterization of highly Mg-doped p-InGaN grown via sputtering

〇Aiko Naito¹, Kohei Ueno¹, Atsushi Kobayashi¹, Hiroshi Fujioka¹ (1.IIS)

10:30 AM - 10:45 AM

[15a-B401-4] Growh of thick underlaying GaN layers for orientation control of cubic InN nanowires

〇Ren Ashibe¹, Shuhei Yagi¹, Hiroyuki Yaguchi¹ (1.Saitama Univ.)

10:45 AM - 11:00 AM

[15a-B401-5] Growth of GaInN besed photovoltaic cells on Free-Standing GaN substrate

〇Takahiro Fujisawa¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. Tech.)

11:00 AM - 11:15 AM

[15a-B401-6] Anisotropic emission wavelength distribution of InGaN-based microlens structures formed on {11-22} GaN substrates

〇Yoshinobu Matsuda¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

11:15 AM - 11:30 AM

△ [15a-B401-7] Investigation of fabrication conditions toward broadband emission from InGaN-based microlens structures on a semipolar plane

〇Shogo Fukushige¹, Yoshinobu Matsuda¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

Session information

[15a-B401-1~7] 15.4 III-V-group nitride crystals

[15a-B401-1] Shape homogenization of GaInN buffer in nanocolumn crystals by the changed nitrogen RF power

[15a-B401-2] Observation of relaxation process in RF-MBE growth of GaInN with
insertion of GaInN buffer layer on GaN using in-situ XRD-RSM

[15a-B401-3] Growth and characterization of highly Mg-doped p-InGaN grown via sputtering

[15a-B401-4] Growh of thick underlaying GaN layers for orientation control of cubic InN nanowires

[15a-B401-5] Growth of GaInN besed photovoltaic cells on Free-Standing GaN substrate

[15a-B401-6] Anisotropic emission wavelength distribution of InGaN-based microlens structures formed on {11-22} GaN substrates

△ [15a-B401-7] Investigation of fabrication conditions toward broadband emission from InGaN-based microlens structures on a semipolar plane

Authenticate

Session information

[15a-B401-1~7] 15.4 III-V-group nitride crystals

[15a-B401-1] Shape homogenization of GaInN buffer in nanocolumn crystals by the changed nitrogen RF power

[15a-B401-2] Observation of relaxation process in RF-MBE growth of GaInN withinsertion of GaInN buffer layer on GaN using in-situ XRD-RSM

[15a-B401-3] Growth and characterization of highly Mg-doped p-InGaN grown via sputtering

[15a-B401-4] Growh of thick underlaying GaN layers for orientation control of cubic InN nanowires

[15a-B401-5] Growth of GaInN besed photovoltaic cells on Free-Standing GaN substrate

[15a-B401-6] Anisotropic emission wavelength distribution of InGaN-based microlens structures formed on {11-22} GaN substrates

△ [15a-B401-7] Investigation of fabrication conditions toward broadband emission from InGaN-based microlens structures on a semipolar plane

Authenticate

[15a-B401-2] Observation of relaxation process in RF-MBE growth of GaInN with
insertion of GaInN buffer layer on GaN using in-situ XRD-RSM