Jo Takeuchi

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Speaker, Author, Co-Author

Wed. Mar 15, 2023 9:45 AM - 11:30 AM B401 (Building No. 2)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[15a-B401-1~7] 15.4 III-V-group nitride crystals

10:00 AM - 10:15 AM

[15a-B401-2] Observation of relaxation process in RF-MBE growth of GaInN with
insertion of GaInN buffer layer on GaN using in-situ XRD-RSM

〇(M1)Jo Takeuchi¹, Takuo Sasaki², Haruka Yokoyama¹, Takeyoshi Onuma¹, Tohru Honda¹, Tomohiro Yamaguchi¹, Yasushi Nanishi³ (1.Kogakuin Univ., 2.QST, 3.Ritsumeikan Univ.)