[15a-B401-1~7] 15.4 III-V-group nitride crystals

[15a-B401-2] Observation of relaxation process in RF-MBE growth of GaInN with
insertion of GaInN buffer layer on GaN using in-situ XRD-RSM

〇(M1)Jo Takeuchi¹, Takuo Sasaki², Haruka Yokoyama¹, Takeyoshi Onuma¹, Tohru Honda¹, Tomohiro Yamaguchi¹, Yasushi Nanishi³ (1.Kogakuin Univ., 2.QST, 3.Ritsumeikan Univ.)

Keywords:RF-MBE, GaInN, XRD-RSM