Oral presentation

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[16a-A408-1~10] 6.2 Carbon-based thin films

Thu. Mar 16, 2023 9:00 AM - 11:30 AM A408 (Building No. 6)

Shinya Ohmagari(AIST), Masafumi Inaba(Kyushu Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[16a-A408-1] Evaluation of NV⁰ defects in single-crystal diamonds using Raman spectroscopy

〇Shouhei Yamazaki¹, Ayato Yamagishi¹, Daichi Hagiwara¹, Takahiro Tsukamoto¹, Hideo Isshiki¹ (1.Univ. Electro-Comm.)

9:15 AM - 9:30 AM

[16a-A408-2] Formation of p-type conductive layer by boron-ion implantation into phosphorus-doped n-type diamond

〇Masahiko Ogura¹, Tomoaki Nishimura², Hiromitsu Kato¹, Daisuke Takeuchi¹, Satoshi Yamasaki¹, Toshiharu Makino¹ (1.AIST, 2.Hosei Univ.)

9:30 AM - 9:45 AM

[16a-A408-3] Fabrication of Li-dope diamond by nuclear transmutation (2)
-Investigation of thermal diffusion of Be in type IIa diamond substrate-

〇Yasuto Miyake¹, Hiroki Okuno¹, Hideyuki Watanabe² (1.RIKEN RNC, 2.AIST)

9:45 AM - 10:00 AM

▲ [16a-A408-4] Application of nanosecond laser annealing to diamond materials

〇Abdelrahman Zkria Ahmed¹, Eslam Abubakr¹, Tsuyoshi Yoshitake¹ (1.Kyushu Univ.)

10:00 AM - 10:15 AM

△ [16a-A408-5] Permalloy/B-doped p-type diamond Schottky barrier diodes

〇Makoto Kawano¹, Haruki Takanashi¹, Kazuyuki Hirama¹, Kazuhide Kumakura¹, Yoshitaka Taniyasu¹ (1.NTT BRL)

10:15 AM - 10:30 AM

▼ [16a-A408-6] Low Specific Contact Resistance Nanocarbon Ohmic Contacts Fabricated by Coaxial Arc Plasma Deposition on Semiconducting Diamonds and Their Device Applications

〇(D)Sreenath Mylo Valappil^1,2, Shinya Ohmagari², Abdelrahman Zkria¹, Tsuyoshi Yoshitake¹ (1.Kyushu Univ., 2.AIST)

10:30 AM - 10:45 AM

△ [16a-A408-7] Hysteresis reduction of diamond MOSFET by continuous process of surface termination treatment and oxide film deposition

〇Kai Sato¹, Kimiyoshi Ichikawa¹, Kan Hayashi¹, Masahiko Ogura², Toshiharu Makino², Hiromitsu Kato², Takeuchi Daisuke², Takao Inokuma¹, Satoshi Yamasaki¹, Norio Tokuda¹, Tubasa Matsumoto¹ (1.Kanazawa Univ., 2.AIST.)

10:45 AM - 11:00 AM

[16a-A408-8] Demonstration of the extremely low temperature operation of diamond MOSFETs with c-si-o channels in cryogenic environments.

〇(B)Masaharu Takeuchi¹, Chiyuki Wakabayashi¹, Kosuke Ota¹, Kento Narita¹, Yasuhiro Takahashi¹, Taisuke Kageura¹, Yoshihiko Takano², Minoru Tachiki², Shuuichi Ooi², Shunichi Arisawa², Hiroshi Kawarada^1,3 (1.Waseda Univ., 2.NIMS, 3.Kagami Memorial Inst.)

11:00 AM - 11:15 AM

△ [16a-A408-9] High frequency operation of C-Si-O channel normally-off diamond MOSFETs

〇(B)Xuezhen Jia¹, Akira Takahashi¹, Yu Fu^1,3, Fuga Asai¹, Kousuke Ota¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Kagami Memorial Inst., 3.UESTC)

11:15 AM - 11:30 AM

[16a-A408-10] [The 53rd Young Scientist Presentation Award Speech] Development of normally-off vertical diamond MOSFET using C-Si-O sidewall channel for high-power and high-speed switching complementary inverter

〇Kento Narita¹, Kosuke Ota¹, Yu Fu¹, Chiyuki Wakabayashi¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Kagami Memorial Inst.)

Session information

[16a-A408-1~10] 6.2 Carbon-based thin films

[16a-A408-1] Evaluation of NV⁰ defects in single-crystal diamonds using Raman spectroscopy

[16a-A408-2] Formation of p-type conductive layer by boron-ion implantation into phosphorus-doped n-type diamond

[16a-A408-3] Fabrication of Li-dope diamond by nuclear transmutation (2)
-Investigation of thermal diffusion of Be in type IIa diamond substrate-

▲ [16a-A408-4] Application of nanosecond laser annealing to diamond materials

△ [16a-A408-5] Permalloy/B-doped p-type diamond Schottky barrier diodes

▼ [16a-A408-6] Low Specific Contact Resistance Nanocarbon Ohmic Contacts Fabricated by Coaxial Arc Plasma Deposition on Semiconducting Diamonds and Their Device Applications

△ [16a-A408-7] Hysteresis reduction of diamond MOSFET by continuous process of surface termination treatment and oxide film deposition

[16a-A408-8] Demonstration of the extremely low temperature operation of diamond MOSFETs with c-si-o channels in cryogenic environments.

△ [16a-A408-9] High frequency operation of C-Si-O channel normally-off diamond MOSFETs

[16a-A408-10] [The 53rd Young Scientist Presentation Award Speech] Development of normally-off vertical diamond MOSFET using C-Si-O sidewall channel for high-power and high-speed switching complementary inverter

Authenticate

Session information

[16a-A408-1~10] 6.2 Carbon-based thin films

[16a-A408-1] Evaluation of NV0 defects in single-crystal diamonds using Raman spectroscopy

[16a-A408-2] Formation of p-type conductive layer by boron-ion implantation into phosphorus-doped n-type diamond

[16a-A408-3] Fabrication of Li-dope diamond by nuclear transmutation (2)-Investigation of thermal diffusion of Be in type IIa diamond substrate-

▲ [16a-A408-4] Application of nanosecond laser annealing to diamond materials

△ [16a-A408-5] Permalloy/B-doped p-type diamond Schottky barrier diodes

▼ [16a-A408-6] Low Specific Contact Resistance Nanocarbon Ohmic Contacts Fabricated by Coaxial Arc Plasma Deposition on Semiconducting Diamonds and Their Device Applications

△ [16a-A408-7] Hysteresis reduction of diamond MOSFET by continuous process of surface termination treatment and oxide film deposition

[16a-A408-8] Demonstration of the extremely low temperature operation of diamond MOSFETs with c-si-o channels in cryogenic environments.

△ [16a-A408-9] High frequency operation of C-Si-O channel normally-off diamond MOSFETs

[16a-A408-10] [The 53rd Young Scientist Presentation Award Speech] Development of normally-off vertical diamond MOSFET using C-Si-O sidewall channel for high-power and high-speed switching complementary inverter

Authenticate

[16a-A408-1] Evaluation of NV⁰ defects in single-crystal diamonds using Raman spectroscopy

[16a-A408-3] Fabrication of Li-dope diamond by nuclear transmutation (2)
-Investigation of thermal diffusion of Be in type IIa diamond substrate-