Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[16p-B401-1~13] 15.4 III-V-group nitride crystals

Thu. Mar 16, 2023 1:00 PM - 5:45 PM B401 (Building No. 2)

Yoshio Honda(Nagoya Univ.), Hisashi Murakami(TUAT), Atsushi Yamaguchi(Kanazawa Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:30 PM

[16p-B401-1] [The 13th Compound Semiconductor Electronics Achievement Award Speech] Creation and social implementation of large & high-quality GaN crystal by the Na flux method

〇Yusuke Mori¹ (1.Osaka Univ.)

1:30 PM - 2:00 PM

[16p-B401-2] [The 1st Diversity & Inclusion Awards Young Female Researchers Award] Unrealized wavelength band deep ultraviolet laser diode

〇Maki Kushimoto¹ (1.Nagoya Univ.)

2:00 PM - 2:15 PM

[16p-B401-3] [The 44th Young Scientist Award Speech] Low-threshold-current (~85 mA) AlGaN-based UV-B laser diode with refractive-index waveguide structure

〇Shunya Tanaka¹, Yuya Ogino¹, Kazuki Yamada¹, Reo Ogura¹, Shohei Teramura¹, Moe Shimokawa¹, Sakaya Ishizuka¹, Sho Iwayama^1,2, Kosuke Sato³, Hideto Miyake², Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹ (1.Meijo Univ., 2.Mie Univ., 3.Asahi Kasei)

2:30 PM - 3:00 PM

[16p-B401-4] [The 44th Paper Award Speech] Highly efficient InGaN-based red LEDs

〇Daisuke Iida¹, Zhe Zhuang¹, Pavel Kirilenko¹, Martin Velazquez-Rizo¹, Kazuhiro Ohkawa¹ (1.KAUST)

3:00 PM - 3:30 PM

[16p-B401-5] [The 44th Paper Award Speech] Fabrication and room-temperature operation of full-color LEDs consisting of
Eu-doped GaN and InGaN quantum wells on the same sapphire substrate

〇Shuhei Ichikawa^1,2, Keishi Shiomi¹, Takaya Morikawa¹, Yutaka Sasaki¹, Dolf Timmerman¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Grad. Sch. of Eng., Osaka Univ., 2.Research Center for UHVEM, Osaka Univ.)

3:30 PM - 3:45 PM

[16p-B401-6] [The 53rd Young Scientist Presentation Award Speech] Design and fabrication of multiwavelength-emitting InGaN-based microstructures toward electrical control of emission spectra

〇Yoshinobu Matsuda¹, Haruyoshi Miyawaki¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

3:45 PM - 4:00 PM

[16p-B401-7] Strain relaxation effects in InGaN nanocolumns via transient absorption spectroscopy

〇Takao Oto¹, Hiroki Gonome¹, Takayuki Chiba², Shunsuke Ishizawa³, Rie Togashi^3,4, Katsumi Kishino⁴ (1.Yamagata Univ., 2.Yamagata Univ. ROEL, 3.Sophia Univ., 4.Sophia Nanotech.)

4:15 PM - 4:30 PM

[16p-B401-8] Experimental demonstration of the three-phase level Fresnel zone plates for deep-ultraviolet light-emitting diodes

〇LINGJIE WEI¹, Shin-ichiro Inoue¹ (1.NICT)

4:30 PM - 4:45 PM

[16p-B401-9] Etching characteristics of GaN nanoholes by hydrogen environment anisotropic thermal etching (HEATE) method

〇Takuto Honda¹, Koji Yoneta¹, Takeki Aikawa¹, Umito Kurabe¹, Mirai Akimoto¹, Akihiko Kikuchi^1,2,3 (1.Sophia Univ., 2.Sophia Photonic Research Center, 3.Sophia Semiconductor Research Institute)

4:45 PM - 5:00 PM

[16p-B401-10] Endpoint detection of Eu-doped GaN layer during etching process using optical emission spectroscopy

〇Yoko Sato¹, Shojiro Konno¹, Atsushi Motoyama¹, Masaki Yokoi¹, Makoto Matsuhama², Shuhei Ichikawa³, Kazutsune Miyanaga³, Norio Kanzaki³, Yasufimi Fujiwara³ (1.HORIBA STEC, 2.HORIBA, 3.Osaka Univ.)

5:00 PM - 5:15 PM

[16p-B401-11] InGaN Etching Caracteristic by Hydrogen Iodide (HI) Neutral Beam

〇Daisuke Ohori¹, Takahiro Ishihara¹, Xuelun Wang^2,3, Nobuhiro Natori⁴, Daisuke Sato⁴, Yiming Li⁵, Kazuhiko Endo¹, Seiji Samukawa^5,1 (1.IFS, Tohoku Univ., 2.AIST, 3.IMaSS, Nagoya Univ., 4.Showa Denko K.K., 5.NYCU)

5:15 PM - 5:30 PM

[16p-B401-12] Theoretical calculation of ±c GaN surface for understanding selective etching in alkali solution

〇Masatomo Sumiya¹, Masato Sumita² (1.NIMS, 2.RIKEN AIP)

5:30 PM - 5:45 PM

[16p-B401-13] Wet etching of polycrystalline gallium nitride using alkaline solution.

〇Daiki Takayama¹, Yukihiro Tsuji¹, Ken Nakata¹, Kozo Makiyama¹ (1.SEI, Ltd)

Session information