Oral presentation

22 Joint Session M » 22.1 Joint Session M "Phonon Engineering"

[17a-D511-1~9] 22.1 Joint Session M "Phonon Engineering"

Fri. Mar 17, 2023 9:15 AM - 11:45 AM D511 (Building No. 11)

Junichiro Shiomi(Univ. of Tokyo), Hiromichi Ohta(Hokkaido Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:15 AM - 9:30 AM

[17a-D511-1] Solid-State Electrochemical Thermal transistors

Qian Yang¹, Hai Jun Cho², Zhiping Bian¹, Mitsuki Yoshimura³, Joonhyuk Lee⁴, Hyoungjeen Jeen⁴, Jinghuang Lin⁵, Jiake Wei⁵, Bin Feng⁵, Yuichi Ikuhara⁵, 〇Hiromichi Ohta² (1.IST-Hokkado Univ., 2.RIES-Hokkado Univ., 3.Eng-Hokkado Univ., 4.Pusan National Univ., 5.Univ. Tokyo)

9:30 AM - 9:45 AM

△ [17a-D511-2] Effect of Solid Electrolyte Thickness on the Thermal Transistor Characteristics

〇(B)Mitsuki Yoshimura¹, Qian Yang^2,3, Zhiping Bian², Hai Jun Cho⁴, Hiromichi Ohta⁴ (1.Eng-Hokkaido Univ., 2.IST-Hokkaido Univ., 3.Jiangsu Univ., 4.RIES-Hokkaido Univ.)

9:45 AM - 10:00 AM

▼ [17a-D511-3] Active Layer for Solid-State Electrochemical Thermal Transistors I:
SrCoO_x−SrFeO_x solid solutions

〇(D)Zhiping Bian¹, Qian Yang², Mitsuki Yoshimura³, Joonhyuk Lee⁴, Hyoungjeen Jeen⁴, Jinghuang Lin⁵, Bin Feng⁵, Yuichi Ikuhara⁵, Hai Jun Cho⁶, Hiromichi Ohta⁶ (1.IST-Hokudai, 2.Jiangsu U., 3.Eng.-Hokudai, 4.Pusan Nat'l U., 5.U. Tokyo, 6.RIES-Hokudai)

10:00 AM - 10:15 AM

▲ [17a-D511-4] Active Layer for Solid-State Electrochemical Thermal Transistors II:
SrCoO_x−SrRuO_x solid solutions

〇(D)Zhiping Bian¹, Hiromichi Ohta² (1.IST-Hokudai, 2.RIES-Hokudai)

10:30 AM - 10:45 AM

[17a-D511-5] Controlling the switching temperature via order-order transition in organic-based thermal switch material

〇Takafumi Ishibe¹, Tatsuya Kaneko¹, Hideo Sato-Akaba¹, Motonori Komura², Yoshiaki Nakamura¹ (1.Grad. School of Eng. Sci., Osaka Univ., 2.NIT, Numazu College)

10:45 AM - 11:00 AM

[17a-D511-6] Lifetime characteristics of Si-nanopillar/SiGe_0.3 composite film with controlled nanopillar spacing by laser heterodyne photothermal displacement method

〇Tomoki Harada^1,2, Daisuke Ohori³, Kazuhiko Endo³, Seiji Samukawa^4,3, Tetsuo Ikari¹, Atsuhiko Fukuyama¹ (1.Univ. of Miyazaki, 2.JSPS Research Fellow, 3.IFS Tohoku Univ, 4.NYCU)

11:00 AM - 11:15 AM

▼ [17a-D511-7] Manipulating superelastic and ferroelastic deformation by cocrystal designing with the choice of coformers: crystal packing and thermal diffusivity analysis

〇Subham Ranjan¹, Ryota Morioka², Junko Morikawa², Satoshi Takamizawa¹ (1.Yokohama City Univ., 2.Tokyo Institute of Tech.)

11:15 AM - 11:30 AM

[17a-D511-8] Temperature dependence of Raman spectrum of multilayer graphene and measurement of optical phonon temperatures

〇Ruian Liu¹, Kareekunnan Afsal¹, Masanobu Miyata¹, Hiroshi Mizuta¹, Mikio Koyano¹ (1.JAIST)

11:30 AM - 11:45 AM

[17a-D511-9] Anharmonic phonons in Ag-P compound Ag₆Si₆Sn₄P₁₂ without lone pair

〇Masanobu Miyata¹, Daisuke Abe¹, Mikio Koyano¹ (1.JAIST)

Session information

[17a-D511-1~9] 22.1 Joint Session M "Phonon Engineering"

[17a-D511-1] Solid-State Electrochemical Thermal transistors

△ [17a-D511-2] Effect of Solid Electrolyte Thickness on the Thermal Transistor Characteristics

▼ [17a-D511-3] Active Layer for Solid-State Electrochemical Thermal Transistors I:
SrCoO_x−SrFeO_x solid solutions

▲ [17a-D511-4] Active Layer for Solid-State Electrochemical Thermal Transistors II:
SrCoO_x−SrRuO_x solid solutions

[17a-D511-5] Controlling the switching temperature via order-order transition in organic-based thermal switch material

[17a-D511-6] Lifetime characteristics of Si-nanopillar/SiGe_0.3 composite film with controlled nanopillar spacing by laser heterodyne photothermal displacement method

▼ [17a-D511-7] Manipulating superelastic and ferroelastic deformation by cocrystal designing with the choice of coformers: crystal packing and thermal diffusivity analysis

[17a-D511-8] Temperature dependence of Raman spectrum of multilayer graphene and measurement of optical phonon temperatures

[17a-D511-9] Anharmonic phonons in Ag-P compound Ag₆Si₆Sn₄P₁₂ without lone pair

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Session information

[17a-D511-1~9] 22.1 Joint Session M "Phonon Engineering"

[17a-D511-1] Solid-State Electrochemical Thermal transistors

△ [17a-D511-2] Effect of Solid Electrolyte Thickness on the Thermal Transistor Characteristics

▼ [17a-D511-3] Active Layer for Solid-State Electrochemical Thermal Transistors I:SrCoOx−SrFeOx solid solutions

▲ [17a-D511-4] Active Layer for Solid-State Electrochemical Thermal Transistors II:SrCoOx−SrRuOx solid solutions

[17a-D511-5] Controlling the switching temperature via order-order transition in organic-based thermal switch material

[17a-D511-6] Lifetime characteristics of Si-nanopillar/SiGe0.3 composite film with controlled nanopillar spacing by laser heterodyne photothermal displacement method

▼ [17a-D511-7] Manipulating superelastic and ferroelastic deformation by cocrystal designing with the choice of coformers: crystal packing and thermal diffusivity analysis

[17a-D511-8] Temperature dependence of Raman spectrum of multilayer graphene and measurement of optical phonon temperatures

[17a-D511-9] Anharmonic phonons in Ag-P compound Ag6Si6Sn4P12 without lone pair

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▼ [17a-D511-3] Active Layer for Solid-State Electrochemical Thermal Transistors I:
SrCoO_x−SrFeO_x solid solutions

▲ [17a-D511-4] Active Layer for Solid-State Electrochemical Thermal Transistors II:
SrCoO_x−SrRuO_x solid solutions

[17a-D511-6] Lifetime characteristics of Si-nanopillar/SiGe_0.3 composite film with controlled nanopillar spacing by laser heterodyne photothermal displacement method

[17a-D511-9] Anharmonic phonons in Ag-P compound Ag₆Si₆Sn₄P₁₂ without lone pair