9:30 AM - 9:45 AM
△ [15a-A301-1] Relationship between Charge States of Silicon Vacancies in 4H-SiC and Doping Concentrations
Keywords:Silicon Carbide, High Energy Electron Irradiation, Silicon Vacancy
Silicon vacancies with -1 valence in silicon carbide (SiC) are expected to be applied as "quantum sensors" that can detect magnetic field and temperature with high sensitivity, but the charge state of silicon vacancies changes with doping concentration, and it is necessary to clarify the relationship. In this study, 4H-SiC with different doping concentrations were irradiated with high-energy electron beams to form silicon vacancies, and their charge states were analyzed based on photoluminescence (PL) measurements.