[15a-A301-1~8] 15.6 Group IV Compound Semiconductors (SiC)

△ [15a-A301-2] Formation and Characterization of High Concentration of Nitrogen-Vacancy Complex Defects in 4H-SiC by Electron Beam Irradiation

〇Qihang Zhang^1,2, Shin-ichiro Sato², Koichi Murata³, Masafumi Hanawa³, Shu Motoki^1,2, Shengjie Zhang^1,2, Hidekazu Tsuchida³, Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ., 2.QST, 3.CRIEPI)

Keywords:Silicon Carbide, Nitrogen-Vacancy Complex Defects, Photoluminescence

Single negatively charged nitrogen-vacancy complex defects (N_CV_Si centers) in silicon carbide which emit at optical communication band at room temperature are expected to be used as quantum sensors with long distance transmission. In this study, the effects of initial nitrogen concentration, high energy electron irradiation dose, and annealing temperature on the formation of N_CV_Si centers are comprehensively investigated, and efficient method to form N_CV_Si centers with high concentration is discussed.