Qihang Zhang

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Speaker, Author, Co-Author

Wed. Mar 15, 2023 9:30 AM - 11:30 AM A301 (Building No. 6)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[15a-A301-1~8] 15.6 Group IV Compound Semiconductors (SiC)

9:45 AM - 10:00 AM

△ [15a-A301-2] Formation and Characterization of High Concentration of Nitrogen-Vacancy Complex Defects in 4H-SiC by Electron Beam Irradiation

〇Qihang Zhang^1,2, Shin-ichiro Sato², Koichi Murata³, Masafumi Hanawa³, Shu Motoki^1,2, Shengjie Zhang^1,2, Hidekazu Tsuchida³, Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ., 2.QST, 3.CRIEPI)

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