9:45 AM - 10:00 AM
△ [15a-A301-2] Formation and Characterization of High Concentration of Nitrogen-Vacancy Complex Defects in 4H-SiC by Electron Beam Irradiation
Keywords:Silicon Carbide, Nitrogen-Vacancy Complex Defects, Photoluminescence
Single negatively charged nitrogen-vacancy complex defects (NCVSi centers) in silicon carbide which emit at optical communication band at room temperature are expected to be used as quantum sensors with long distance transmission. In this study, the effects of initial nitrogen concentration, high energy electron irradiation dose, and annealing temperature on the formation of NCVSi centers are comprehensively investigated, and efficient method to form NCVSi centers with high concentration is discussed.