[15a-A301-1~8] 15.6 Group IV Compound Semiconductors (SiC)

△ [15a-A301-1] Relationship between Charge States of Silicon Vacancies in 4H-SiC and Doping Concentrations

〇Shengjie Zhang^1,2, Shin-ichiro Sato¹, Koichi Murata³, Masafumi Hanawa³, Shu Motoki^2,1, Qihang Zhang^1,2, Hidekazu Tsuchida³, Yasuto Hijikata², Takeshi Ohshima¹ (1.QST, 2.Saitama Univ., 3.CRIEPI)

Keywords:Silicon Carbide, High Energy Electron Irradiation, Silicon Vacancy

Silicon vacancies with -1 valence in silicon carbide (SiC) are expected to be applied as "quantum sensors" that can detect magnetic field and temperature with high sensitivity, but the charge state of silicon vacancies changes with doping concentration, and it is necessary to clarify the relationship. In this study, 4H-SiC with different doping concentrations were irradiated with high-energy electron beams to form silicon vacancies, and their charge states were analyzed based on photoluminescence (PL) measurements.