[15a-A502-1~8] 3.14 Silicon photonics and integrated photonics (formerly 3.15)

△ [15a-A502-7] Responsivity spectrum and temperature dependence of a waveguide-photodetector

〇(M1C)Shohei Kaneko¹, Jose A. Piedra-Lorenzana¹, Fujikata Junichi², Ishikawa Yasuhiko¹ (1.Toyohashi Univ. Tech., 2.Tokushima Univ.)

Keywords:Silicon Photonics, Germanium, Photodetecter

In Si photonics, Ge epitaxial layers on Si are used to fabricate photodetectors and optical intensity modulators operating in the optical communication wavelengths (1.3-1.6 µm). In this study, the temperature dependence of responsivity spectra is studied for a lateral pin photodetector with a Ge wire structure. The spectra are shifted to longer wavelengths with increasing temperature (0.8 nm/°C), regardless of the wire width. Such a red shift reflects the decrease in the direct band gap of Ge with increasing temperature.