2023年第70回応用物理学会春季学術講演会

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3 光・フォトニクス » 3.14 シリコンフォトニクス・集積フォトニクス(旧3.15)

[15a-A502-1~8] 3.14 シリコンフォトニクス・集積フォトニクス(旧3.15)

2023年3月15日(水) 09:00 〜 11:15 A502 (6号館)

菊地 健彦(住友電工)、唐 睿(東大)

11:00 〜 11:15

[15a-A502-8] All-Group-IV GeSn Edge-Emitting Laser on Silicon for Silicon Photonics

Guo-En Chang1、Bo-Rui Wu1、Yin-Pu Huang1、Cheng-Ting Kuo1 (1.National Chung Cheng Univ.)

キーワード:GeSn alloys, Lasers, Photoluminescence

Conventional group-IV semiconductors, including Si, Ge, and their alloys, are indirect-bandgap materials, resulting in extremely low emission efficiency through efficient direct-gap transition. Recently, a new class of group-IV semiconductor, GeSn alloy, has emerged for efficient light emitters. The introduction of Sn into Ge can effectively modulate the bandgap structure and eventually achieve direct bandgap with a sufficient of Sn content, thus enabling efficient light emission. Here, we demonstrate optically-pumped GeSn edge-emitting lasers (EELs) on Si as a crucial on-chip light sources for silicon photonics.