Growth and characterization of highly Mg-doped p-InGaN grown via sputtering

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Wed. Mar 15, 2023 9:45 AM - 11:30 AM B401 (Building No. 2)

Yoshiki Saito(Toyoda Gosei)

10:15 AM - 10:30 AM

〇Aiko Naito¹, Kohei Ueno¹, Atsushi Kobayashi¹, Hiroshi Fujioka¹ (1.IIS)

Keywords:sputtering, InGaN, doping