[15a-D209-1~5] 7.3 Micro/Nano patterning and fabrication

[15a-D209-4] Hybrid simulation of stochastic method and molecular dynamics of electron beam lithography for chemically amplified resists

〇Daiki Nakamura¹, Kaito Yamada¹, Bunta Inoue¹, Masaaki Yasuda¹ (1.Osaka Met. Univ.)

Keywords:electron beam lithography, chemically amplified resist, simulation

We have developed a hybrid simulation that combines stochastic and molecular dynamics methods of electron beam lithography for negative chemically amplified resists. Hybrid simulation was able to reproduce the resist shape at each PEB step for a line pattern with a line width of 2 nm. The cohesion acting on the molecules suppressed the unnatural popping out of the resist molecules, so the LER obtained by the hybrid simulation was smaller than that obtained by the stochastic method and was a reasonable value.