09:15 〜 09:30
▲ [15a-D215-2] Formation of Single-Crystal Copper Oxide by Laser-induced Crystallization: Chevron Beam-Profiles Work While Gaussian Beam-Profiles Fail
キーワード:laser induced crystallization, copper oxide, beam profile
Conventional laser-induced-crystallization (LIC) adopted in attempts of crystallizing non-single-crystal thin films offers features advantageous for devices built on non-single-crystal substrates for which epitaxial growth does not serve. Although conventional LIC, with a Gaussian beam-profile and with a significant emphasis on elementary semiconductors such as Si, has a long history, it fails to produce single-crystal. In this paper, selective-area crystallization of non-single-crystal copper(II) oxide (CuO) is described. The crystallization is achieved by our LIC with a beam-profile in the shape of chevron in contrast to Gaussian beam-profiles. Provided the experimental demonstration, a theoretical assessment based on a cellular automaton model, with the behaviors of localized recrystallization and stochastic nucleation, is developed, casting light on the fundamental question: Why do chevron-beam profiles succeed in producing single-crystal, while Gaussian-beam profiles fail?