2023年第70回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

9 応用物性 » 9.1 誘電材料・誘電体

[15a-D215-1~9] 9.1 誘電材料・誘電体

2023年3月15日(水) 09:00 〜 11:30 D215 (11号館)

塚田 真也(島根大)、真岩 宏司(湘南工科大)

09:15 〜 09:30

[15a-D215-2] Formation of Single-Crystal Copper Oxide by Laser-induced Crystallization: Chevron Beam-Profiles Work While Gaussian Beam-Profiles Fail

William Bodeau1,2,3,4、Kaisei Otoge5,6、Wenchang Yeh5,6、〇Nobuhiko P Kobayashi1,2,3,4 (1.Nanostructured Energy Conversion Technology and Research (NECTAR)、2.Electrical and Computer Engineering Department、3.Baskin School of Engineering、4.University of California Santa Cruz、5.Graduate School of Natural Science and Technology、6.Shimane University)

キーワード:laser induced crystallization, copper oxide, beam profile

Conventional laser-induced-crystallization (LIC) adopted in attempts of crystallizing non-single-crystal thin films offers features advantageous for devices built on non-single-crystal substrates for which epitaxial growth does not serve. Although conventional LIC, with a Gaussian beam-profile and with a significant emphasis on elementary semiconductors such as Si, has a long history, it fails to produce single-crystal. In this paper, selective-area crystallization of non-single-crystal copper(II) oxide (CuO) is described. The crystallization is achieved by our LIC with a beam-profile in the shape of chevron in contrast to Gaussian beam-profiles. Provided the experimental demonstration, a theoretical assessment based on a cellular automaton model, with the behaviors of localized recrystallization and stochastic nucleation, is developed, casting light on the fundamental question: Why do chevron-beam profiles succeed in producing single-crystal, while Gaussian-beam profiles fail?