[15a-D215-1~9] 9.1 誘電材料・誘電体

▲ [15a-D215-2] Formation of Single-Crystal Copper Oxide by Laser-induced Crystallization: Chevron Beam-Profiles Work While Gaussian Beam-Profiles Fail

William Bodeau^1,2,3,4、Kaisei Otoge^5,6、Wenchang Yeh^5,6、〇Nobuhiko P Kobayashi^1,2,3,4 (1.Nanostructured Energy Conversion Technology and Research (NECTAR)、2.Electrical and Computer Engineering Department、3.Baskin School of Engineering、4.University of California Santa Cruz、5.Graduate School of Natural Science and Technology、6.Shimane University)

キーワード：laser induced crystallization, copper oxide, beam profile

Conventional laser-induced-crystallization (LIC) adopted in attempts of crystallizing non-single-crystal thin films offers features advantageous for devices built on non-single-crystal substrates for which epitaxial growth does not serve. Although conventional LIC, with a Gaussian beam-profile and with a significant emphasis on elementary semiconductors such as Si, has a long history, it fails to produce single-crystal. In this paper, selective-area crystallization of non-single-crystal copper(II) oxide (CuO) is described. The crystallization is achieved by our LIC with a beam-profile in the shape of chevron in contrast to Gaussian beam-profiles. Provided the experimental demonstration, a theoretical assessment based on a cellular automaton model, with the behaviors of localized recrystallization and stochastic nucleation, is developed, casting light on the fundamental question: Why do chevron-beam profiles succeed in producing single-crystal, while Gaussian-beam profiles fail?