[15a-D419-1~9] 15.1 Bulk crystal growth

[15a-D419-5] Evaluation of epi-ready wafer of ScAlMgO₄ single crystal.

〇Yuji Shiraishi¹, Toki Nanto¹, Hiroyuki Andou¹, Tsuguo Fukuda¹, Seiryu Shinichi², Takashi Fujii^1,3, Tsutomu Araki³, Kotaro Ishiji⁴ (1.Fukuda Crystal Lab., 2.OTAS Japan, 3.Ritsumeikan Univ., 4.SAGA-LS)

Keywords:ScAlMgO4, SAM, Single Crystal

It has been reported that ScAlMgO₄ (SAM) single crystals can be used to produce GaN free-standing substrates with high yield, and that they can be reused multiple times by repolishing SAM substrates that have naturally delaminated after thin film growth. Crystal defects in SAM single crystals have been investigated by optical evaluation and X-ray topography (XRT) and reported. The quality of epi-ready wafers for GaN substrates produced this time was examined by mapping half-value widths by XRC and comparing them by XRT observation.