[15a-D419-1~9] 15.1 Bulk crystal growth

[15a-D419-8] Investigation on segregation of phosphorus (P) in homogeneous SiGe crystal growth by traveling liquidus-zone (TLZ) method

Shiohara Kouta¹, 〇Toshinori Taishi¹, Arai Yasutomo², Kinoshita Kyoichi³ (1.Shinshu Univ., 2.JAXA, 3.Meiji Univ.)

Keywords:silicon germanium, segregation

In this study, segregation of P in homogeneous SiGe crystal growth by traveling liquidus-zone (TLZ) method was investigated. From results of compositional analysis of a Si₂₅Ge₇₅ grown crystal, it is found that concentration of P increased with progress of the crystal growth, indicating that the segregation coefficient of P in SiGe is less than unity.