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[15a-D419-8] Investigation on segregation of phosphorus (P) in homogeneous SiGe crystal growth by traveling liquidus-zone (TLZ) method
Keywords:silicon germanium, segregation
In this study, segregation of P in homogeneous SiGe crystal growth by traveling liquidus-zone (TLZ) method was investigated. From results of compositional analysis of a Si25Ge75 grown crystal, it is found that concentration of P increased with progress of the crystal growth, indicating that the segregation coefficient of P in SiGe is less than unity.