[15a-D511-1~11] 15.7 Crystal characterization, impurities and crystal defects

[15a-D511-2] Impact of Interstitial Oxygen on Void Reduction Effect of Nitrogen in Czochralski Silicon Single Crystals

〇Akira Sada¹, Yusuke Noda², Koji Sueoka², Kaoru kajiwara³, Masataka Hourai³ (1.Graduate School of Okayama Pref. Univ., 2.Department of Communication Engineering, Okayama Pref. Univ., 3.SUMCO Corporation)

Keywords:Czochralski Silicon, void defect, nitrogen dope

Nitrogen (N) doped during Si crystal growth suppresses the aggregation of vacancies (V) and reduces the size of void defects, however, it is known that the void suppression effect of N weakens as the oxygen (O) concentration increases. In this study, we performed first-principles calculations for a series of complexes involving N, V, and O in Si crystals to analyze the void suppression mechanism and the effect of O on it. The calculation results show that O restricts the movement of surrounding atoms, which reduces the stability of the N-V complexes formed.