The 70th JSAP Spring Meeting 2023

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15a-E102-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Mar 15, 2023 9:15 AM - 12:00 PM E102 (Building No. 12)

Mutsumi Sugiyama(Tokyo Univ. of Sci.), Tomoki Abe(Tottori Univ.)

9:30 AM - 9:45 AM

[15a-E102-2] Crystal Growth of Continuous Composition Gradient RS-MgZnO Thin Films

Tomoki Otsuka1, Eiji Kikuchi2,3, Taisei Hattori1, Tsutomu Araki1, Kentaro Kaneko2 (1.Col. of Sci. & Eng., Ritsumeikan Univ., 2.Res. Org. Sci. & Tech., Ritsumeikan Univ., 3.Grad. Sch of Eng., Kyoto Univ.)

Keywords:Magnesium Oxide, Zinc Oxide, vacuum ultraviolet emission

RS-MgZnO is attracting attention as a solid-state light source to replace conventional gas light sources for UV. Carrier control of RS-MgZnO becomes easier at low Mg compositions.As a first step toward achieving conductivity, we attempted to form a thin film in the unstable low-Mg composition region by preparing composition gradient layers using a newly devised concentration-gradient mist CVD method. X-ray diffraction measurements suggest a single phase RS-MgZnO thin film. Detailed structural analysis was also carried out by TEM.