10:45 AM - 11:00 AM
[15a-E102-6] Effects of Postannealing on the Properties of Transparent Conductive
W-Doped In2O3 Films/glass substrates
Keywords:In2O3, Thin film
We have reported the characteristics of solid-phase-crystallization of In2O3-based thin films obtained on non-alkali glass substrates. Amorphous films were obtained in case of intentionally no-heating of substrate and then polycrystalline films were achieved after solid-phase crystallization. Analysis of the Hall effect measurements yield a typically size effect where the electrical resistivity is governed by the ratio = (film thickness (t)/carrier mean free path), regardless of the two different thin film structural states. This implies an important issue in terms of materials science, such as the possibility that the film structure state formation mechanism differs around the ratio of 1. In this talk, from the very recent results of transparent conductive W-doped In2O3 films with various thicknesses ranging from 5 to 50 nm, we will report the progress toward solving the above issues.