9:30 AM - 11:30 AM
[15a-PA01-40] CVD Growth of MoS2 on Nitride Semiconductors using Ar/O2 Carrier Gas
Keywords:layered materials, Transition Metal Dichalcogenide, Nitride semiconductors
MoS2 has large potential for applications in the field of next-generation electronic semiconductor devices composed of few atomic layers. Therefore, it is meaningful to synthesized MoS2 directly on nitride semiconductors such as GaN and AlN, because it enables the application of broadband photodetectors or high mobility field-effect transistors. In this work, we report the results of CVD growth of MoS2 on nitride semiconductors using Ar/O2 as carrier gas.