[15p-A205-1~12] Recent progresses of device applications of low-dimensional materials

[15p-A205-3] Development of 16 Mb NRAM Aiming for High Reliability, Small Cell Area, and High Switching Speed

〇Hitoshi Saito¹, Jun-ichi Watanabe¹, Tetsuro Tamura¹, Naoya Sashida¹, Kota Hara¹, Kuninori Kawabata¹, Atsushi Fujii¹, Jun Ohno¹, Atsushi Nakakubo¹, Manabu Kojima¹, Harry Luan², Rahul Sen² (1.FUJITSU SEMICONDUCTOR MEMORY SOLUTION, 2.Nantero, Inc.)

Keywords:NRAM, CNT

We developed 16 Mb 1T1R NRAM integrating CNTs resistor elements into the intermediate wirings of 55 nm CMOS. Excellent reliabilities were proven by the retention test at 150 ^oC extrapolated for 100 kh and the endurance test of 1E6 cycles. The switching speed was realized for cell array at 200 ns. In addition, we successfully fabricated CNTs resistor elements with 49 % shrunk small via pitch cell area and realized advantageous high switching speed with 0.5 ns single pulse even omitting verify operation.