The 70th JSAP Spring Meeting 2023

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[15p-A301-1~13] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Mar 15, 2023 1:00 PM - 4:45 PM A301 (Building No. 6)

Takeshi Mitani(AIST), Hirokuni Asamizu(ローム)

1:30 PM - 1:45 PM

[15p-A301-3] Analysis of the Step Interaction through Carbon Diffusion Field in SiC Solution Growth

〇(M1)Yuki Nakanishi1, Kentaro Kutsukake2,3, Yifan Dang1, Shunta Harada1,3, Miho Tagawa1,3, Toru Ujihara1,3 (1.Graduate School of Eng. Nagoya Univ., 2.AIP RIKEN, 3.IMaSS Nagoya Univ.)

Keywords:silicon carbide, crystal growth