3:30 PM - 3:45 PM
[15p-A301-9] Study on Four-point probe Measurement of SiC Substrates in Laser Doping
Keywords:laser doping, SiC, four-point probe measurement of resistance
Four-probe measurements of common semiconductors such as Si, Ge, and GaAs are widely used for accurate measurement of resistivity. However, SiC substrates, which are known as widegap semiconductors, are not often used for four-probe measurement due to high Schottky barrier.
We are going to report that a high-concentration nitrogen-doped n-type layer exceeding the solid solubility limit was formed by laser length measurement and the sheet resistance of the surface was investigated using a commercially available four-probe resistance measurement device and a micro four-terminal laser device.
We are going to report that a high-concentration nitrogen-doped n-type layer exceeding the solid solubility limit was formed by laser length measurement and the sheet resistance of the surface was investigated using a commercially available four-probe resistance measurement device and a micro four-terminal laser device.