[15p-A404-1~19] 6.1 Ferroelectric thin films

△ [15p-A404-1] Growth and characterization of Y-doped HfO₂ epitaxial films on various substrates

〇(M1)Yoshiki Maekawa¹, Koji Hirai¹, Shinnosuke Yasuoka¹, Kazuki Okamoto¹, Takao Shimizu², Hiroshi Funakubo¹ (1.Tokyo Tech., 2.NIMS)

Keywords:ferroelectric materials, Pulsed laser deposition, HfO2

HfO₂-based ferroelectrics were first reported to be ferroelectric in 2011. Unlike conventional materials, these have been found to exhibit ferroelectricity even in ultra-thin films of less than 10 nm. Therefore, they have been extensively studied for memory applications. However, polycrystalline films have mainly been reported. Therefore, epitaxial thin films with aligned crystalline directions need to be studied to understand the basic properties of HfO₂-based ferroelectrics. In this study, an attempt to synthesise HfO₂-based epitaxial films is reported in order to extend the options of crystal structures and materials from which epitaxial films of HfO₂-based ferroelectrics can be grown.