Oral presentation

6 Thin Films and Surfaces » 6.1 Ferroelectric thin films

[15p-A404-1~19] 6.1 Ferroelectric thin films

Wed. Mar 15, 2023 1:00 PM - 6:30 PM A404 (Building No. 6)

Tomoaki Yamada(Nagoya Univ.), Takao Shimizu(NIMS), Hiroshi Uchida(Sophia Univ.), Minoru Noda(Kyoto Institute of Technology)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

△ [15p-A404-1] Growth and characterization of Y-doped HfO₂ epitaxial films on various substrates

〇(M1)Yoshiki Maekawa¹, Koji Hirai¹, Shinnosuke Yasuoka¹, Kazuki Okamoto¹, Takao Shimizu², Hiroshi Funakubo¹ (1.Tokyo Tech., 2.NIMS)

1:15 PM - 1:30 PM

△ [15p-A404-2] No heating deposition of HfO₂-CeO₂ ferroelectric thick films by sputtering method

〇(M1)Nachi Chaya¹, Koji Hirai¹, Shinnosuke Yasuoka¹, Kazuki Okamoto¹, Wakiko Yamaoka², Yukari Inoue², Hiroshi Funakubo¹ (1.Tokyo Tech., 2.TDK Corp.)

1:30 PM - 1:45 PM

[15p-A404-3] Spatial resolution of polarization domain observation under electrode by direct piezoelectric response microscopy

〇Takuto Hagiwara¹, Kasidit Toprasertpong², Shinichi Takagi², Norifumi Fujimura¹, Takeshi Yoshimura¹ (1.Osaka Metropolitan Univ., 2.The Univ. of Tokyo)

1:45 PM - 2:00 PM

[15p-A404-4] Investigation of the threshold voltage control of MFSFET with ferroelectric nondoped HfO₂

〇Masakazu Tanuma¹, Joong-Won Shin¹, Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

2:00 PM - 2:15 PM

▼ [15p-A404-5] Effects of plasma damage reduction for Pt gate electrode deposition on the variation of MFSFET characteristics with ferroelectric nondoped HfO₂

〇(D)JoongWon Shin¹, Masakazu Tanuma¹, Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

2:15 PM - 2:30 PM

[15p-A404-6] 【Highlighted Presentation】Development of an operando laser-based photoemission electron microscope capable of characterizing ferroelectric properties

〇Hirokazu Fujiwara¹, Yuki Itoya², Masaharu Kobayashi³, Cedric Bareille^4,5, Shik Shin^5,6, Toshiyuki Taniuchi^4,5 (1.ISSP, 2.IIS, 3.d.lab, 4.GSFS, 5.MIRC, 6.Univ. of Tokyo)

2:30 PM - 2:45 PM

△ [15p-A404-7] Evaluation of dielectric breakdown of ferroelectric HfO₂ capacitors using laser-photoelectron emission microscopy

〇Yuki Itoya¹, Hirokazu Fujiwara², Cedric Bareille^3,4, Shik Shin^4,5, Toshiyuki Taniuchi^3,4, Masaharu Kobayashi^1,6 (1.IIS, 2.ISSP, 3.GSFS, 4.MIRC, 5.Univ. of Tokyo, 6.d. lab)

2:45 PM - 3:00 PM

[15p-A404-8] Improvement in ferroelectricity of Hf_0.5Zr_0.5O₂ thin film followed by nitrogen plasma treatment on bottom electrode

〇Hiromi Hayakawa¹, Sho Tanaka¹, Minoru Noda¹ (1.Kyoto Inst. Tech Univ.)

3:00 PM - 3:15 PM

△ [15p-A404-9] Effects on Electrical Characteristics of Hf_0.5Zr_0.5O₂ Ferroelectric Thin Films by Applying Several Kind of Electric Field during RTA

〇(M2)Sho Tanaka¹, Takumi Hayakawa¹, Minoru Noda¹ (1.Kyoto Inst. Tech.)

3:30 PM - 4:00 PM

▲ [15p-A404-10] [The 44th Best Review Paper Award Speech] Two-dimensional polar metal by charge transfer to a ferroelectric insulator

〇Ariando Ariando¹ (1.Nat'l Univ. of Singapore)

4:00 PM - 4:15 PM

[15p-A404-11] Estimation of Residual Hydrogen Contents by PBW of Ferroelectric Materials

Jun Hirade¹, 〇Masaki Yamaguchi^1,2, Hideo Kimura³ (1.Fac. of Eng., Shibaura Inst. of Tech., 2.IRCGE, Shibaura Inst. of Tech., 3.Yantai Univ.)

4:15 PM - 4:30 PM

[15p-A404-12] Local Structure Analysis of V-doped BiFeO₃ Thin Film by X-ray Fluorescence Holography

〇Kazuki Arima¹, Seiji Nakashima¹, Koji Kimura², Koichi Hayashi², Naohisa Happo³, Hironori Fujisawa¹ (1.Univ. of Hyogo, 2.Nagoya Inst. of Technology, 3.Hiroshima City Univ.)

4:30 PM - 4:45 PM

[15p-A404-13] The growth of (100) BiFeO₃ epitaxial thin films on Si substrates by combinatorial sputtering method

〇Kohei Takaki¹, Norifumi Fujimura¹, Takeshi Yoshimura¹ (1.Osaka Metro. Univ.)

4:45 PM - 5:00 PM

[15p-A404-14] Enhaced Electro-optic Property in Mg-doped ZnO Thin Films

Xueyou Yuan¹, 〇Tomoaki Yamada¹, Lei Meng² (1.Nagoya Univ., 2.Inst. Semiconductors, Chinese Academy of Sciences)

5:15 PM - 5:30 PM

[15p-A404-15] Proposal of Ultra-Fast Reading Method for SNDM Ferroelectric Probe Memory

〇Yasuo Cho¹, Yoshiomi Hiranaga² (1.Tohoku Univ. NICHe, 2.Tohoku Univ. RIEC)

5:30 PM - 5:45 PM

▲ [15p-A404-16] Investigation of development of stoichiometric LiNbO₃ recording media for SNDM probe memory

〇(P)Nana Sun¹, Kanamori Hiroaki², Iizuka Takeshi², Konishi Akio², Yasuo Cho¹ (1.Tohoku Univ. NICHe, 2.I-PEX Piezo Sol.)

5:45 PM - 6:00 PM

[15p-A404-17] Evaluation of electrical properties for epitaxial (Al,Sc)N film deposited on NbN electrode

〇(D)Shinnosuke Yasuoka¹, Reika Ota¹, Kazuki Okamoto¹, Takao Shimizu^2,3, Hiroshi Funakubo¹ (1.Tokyo Tech., 2.NIMS, 3.JST PREST)

6:00 PM - 6:15 PM

[15p-A404-18] Evaluation of the effect of prior plasma nitriding on plasma-oxidized AlScN by AR-HAXPES

〇Tomoya Tsutsumi¹, Kazuki Goshima¹, Yoshiharu Kirihara¹, Tatsuki Okazaki², Akira Yasui³, Kuniyuki Kakushima⁴, Yuichiro Mitani^1,2, Hiroshi Nohira¹ (1.Tokyo City Univ, 2.Adv. Res. Lab., Tokyo City Univ., 3.JASRI, 4.Tokyo Institute of Technology)

6:15 PM - 6:30 PM

[15p-A404-19] Ferroelectric properties in AlN thin films fabricated by sputtering method

〇Kota Hasegawa^1,2, Takao Shimizu², Takeo Ohsawa², Isao Sakaguchi^1,2, Naoki Ohashi^1,2,3 (1.Kyushu Univ., 2.NIMS, 3.Tokyo tech)

Session information

[15p-A404-1~19] 6.1 Ferroelectric thin films

△ [15p-A404-1] Growth and characterization of Y-doped HfO₂ epitaxial films on various substrates

△ [15p-A404-2] No heating deposition of HfO₂-CeO₂ ferroelectric thick films by sputtering method

[15p-A404-3] Spatial resolution of polarization domain observation under electrode by direct piezoelectric response microscopy

[15p-A404-4] Investigation of the threshold voltage control of MFSFET with ferroelectric nondoped HfO₂

▼ [15p-A404-5] Effects of plasma damage reduction for Pt gate electrode deposition on the variation of MFSFET characteristics with ferroelectric nondoped HfO₂

[15p-A404-6] 【Highlighted Presentation】Development of an operando laser-based photoemission electron microscope capable of characterizing ferroelectric properties

△ [15p-A404-7] Evaluation of dielectric breakdown of ferroelectric HfO₂ capacitors using laser-photoelectron emission microscopy

[15p-A404-8] Improvement in ferroelectricity of Hf_0.5Zr_0.5O₂ thin film followed by nitrogen plasma treatment on bottom electrode

△ [15p-A404-9] Effects on Electrical Characteristics of Hf_0.5Zr_0.5O₂ Ferroelectric Thin Films by Applying Several Kind of Electric Field during RTA

▲ [15p-A404-10] [The 44th Best Review Paper Award Speech] Two-dimensional polar metal by charge transfer to a ferroelectric insulator

[15p-A404-11] Estimation of Residual Hydrogen Contents by PBW of Ferroelectric Materials

[15p-A404-12] Local Structure Analysis of V-doped BiFeO₃ Thin Film by X-ray Fluorescence Holography

[15p-A404-13] The growth of (100) BiFeO₃ epitaxial thin films on Si substrates by combinatorial sputtering method

[15p-A404-14] Enhaced Electro-optic Property in Mg-doped ZnO Thin Films

[15p-A404-15] Proposal of Ultra-Fast Reading Method for SNDM Ferroelectric Probe Memory

▲ [15p-A404-16] Investigation of development of stoichiometric LiNbO₃ recording media for SNDM probe memory

[15p-A404-17] Evaluation of electrical properties for epitaxial (Al,Sc)N film deposited on NbN electrode

[15p-A404-18] Evaluation of the effect of prior plasma nitriding on plasma-oxidized AlScN by AR-HAXPES

[15p-A404-19] Ferroelectric properties in AlN thin films fabricated by sputtering method

Authenticate

Session information

[15p-A404-1~19] 6.1 Ferroelectric thin films

△ [15p-A404-1] Growth and characterization of Y-doped HfO2 epitaxial films on various substrates

△ [15p-A404-2] No heating deposition of HfO2-CeO2 ferroelectric thick films by sputtering method

▼ [15p-A404-5] Effects of plasma damage reduction for Pt gate electrode deposition on the variation of MFSFET characteristics with ferroelectric nondoped HfO2

△ [15p-A404-7] Evaluation of dielectric breakdown of ferroelectric HfO2 capacitors using laser-photoelectron emission microscopy

△ [15p-A404-9] Effects on Electrical Characteristics of Hf0.5Zr0.5O2 Ferroelectric Thin Films by Applying Several Kind of Electric Field during RTA

▲ [15p-A404-10] [The 44th Best Review Paper Award Speech] Two-dimensional polar metal by charge transfer to a ferroelectric insulator

▲ [15p-A404-16] Investigation of development of stoichiometric LiNbO3 recording media for SNDM probe memory

Authenticate

△ [15p-A404-1] Growth and characterization of Y-doped HfO₂ epitaxial films on various substrates

△ [15p-A404-2] No heating deposition of HfO₂-CeO₂ ferroelectric thick films by sputtering method

▼ [15p-A404-5] Effects of plasma damage reduction for Pt gate electrode deposition on the variation of MFSFET characteristics with ferroelectric nondoped HfO₂

△ [15p-A404-7] Evaluation of dielectric breakdown of ferroelectric HfO₂ capacitors using laser-photoelectron emission microscopy

△ [15p-A404-9] Effects on Electrical Characteristics of Hf_0.5Zr_0.5O₂ Ferroelectric Thin Films by Applying Several Kind of Electric Field during RTA

▲ [15p-A404-16] Investigation of development of stoichiometric LiNbO₃ recording media for SNDM probe memory