4:00 PM - 4:15 PM
[15p-A408-12] Fabrication of hydrogenated amorphous carbon nitride films with high nitrogen content using the RF plasma CVD of the gas mixtiure of C2H2, N2, and Ar
Keywords:amorphous carbon nitride
Hydrogenated amorphous carbon nnitride films were fabricated by using the RF plasma CVD of the gas mixture of C2H2, N2, and Ar. By fully suppressing then partial pressure of C2H2 compared with that of N2, high [N]/([N]+[C]) ratios were obtained as 0.38 at the mfilm surface and 0.42 at the film inside. Although these ratios were lower than those obtained for the films fabricated using the microwave plasma CVD of the gas mixture of C2H2 and N2, the situation that the [N]/([N]+[C]) ratios of the film inside are higher than those at the fikm surface is reproduced in the present reacction system.