[15p-B401-1~18] 15.4 III-V-group nitride crystals

△ [15p-B401-15] Cavity length control of GaN VCSELs with ITO electrode and Nb₂O₅ spacer

〇Ruka Watanabe¹, Mitsuki Yanagawa¹, Tsuyoshi Nagasawa¹, Kenta Kobayashi¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹ (1.Meijo Univ.)

Keywords:GaN-based surface emitting lasers, Cavity length control

GaN-based surface emitting lasers (VCSELs) need to control the cavity length by several λ by controlling the film thickness. We have reported that the GaN cavity length can be controlled by ±0.5% by measuring the in situ reflectance spectra during epitaxial growth. However, during the device formation process after growth, it is necessary to add additional layers of ITO electrodes and Nb₂O₅ spacer layers, which constitute the cavity. In this study, we attempted to control the cavity length more precisely by correcting the refractive index based on the shift of the cavity wavelength after ITO or Nb₂O₅ deposition.