[15p-B401-1~18] 15.4 III-V-group nitride crystals

△ [15p-B401-8] Design of semipolar (20-21) InGaN-based circularly polarized light emitters using a Si₃N₄ metasurface

〇Yuki Murata¹, Shuhei Ichikawa^1,2, Shintaro Toda^1,3, Yasuhumi Fujiwara¹, Kojima Kazunobu¹, Nakagawa Takashi¹ (1.Graduate School of Engineering, Osaka Univ., 2.Research Center for UHVEM, Osaka Univ., 3.ULVAC Inc.)

Keywords:Metasurface, Circular polarization, InGaN

We have previously proposed that InGaN-based vertical cavity surface emitting laser (VCSEL) combined with Si₃N₄ metasurface can generate highly efficient circularly polarized light. However, the fabrication of VCSELs is a complex process. In this study, we report the circular polarization conversion efficiency of a semipolar InGaN LED that can emit strongly polarized light as a light source.