[15p-B409-1~12] 12.3 機能材料・萌芽的デバイス

▼ [15p-B409-7] Ar/N₂-plasma nitridation process for LaB_xN_y tunnel layer formation on pentacene-based floating-gate memory utilizing N-doped LaB₆ metal and high-k LaB_xN_y insulator

〇(DC)EUNKI HONG¹、Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

キーワード：Floating-gate memory, Organic field-effect transistor, Ar/N2-plasma nitridation

The nitrogen-doped (N-doped) lanthanum hexaboride (LaB₆) has widely used as the contact electrode with a low resistivity, low work function, and oxidation immunity.
Previously, we have reported pentacene-based floating-gate (FG) Au/pentacene/N-doped LaB₆(Metal: M)/ LaB_xN_y (Insulator: I)/ N-doped LaB₆(M)/LaB_xN_y(I)/n⁺-Si(100) (Semiconductor: S) MIMIS diode with 5-nm thick LaB_xN_y tunnel layer (TL) formed by Ar/N₂-plasma sputtering.
In this study, we have investigated the Ar/N₂-plasma nitridation on N-doped LaB₆ FG for the LaB_xN_y TL formation.