Linear agglomeration during the CW-laser lateral-crystallization of Si films

Nobuo Sasaki; Satoshi Takayama; Rikuto Sasai; Yukiharu Uraoka

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[15p-B410-1~15] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Wed. Mar 15, 2023 1:00 PM - 5:30 PM B410 (Building No. 2)

Masato Sone(Tokyo Tech), Fumito Imura(Hundred Semiconductors Inc.)

2:45 PM - 3:00 PM

[15p-B410-7] Linear agglomeration during the CW-laser lateral-crystallization of Si films

〇Nobuo Sasaki^1,2, Satoshi Takayama², Rikuto Sasai², Yukiharu Uraoka² (1.Sasaki Consulting, 2.NAIST)

Keywords:grain-boundary free film, continuous-wave laser, agglomeration

Straight-line shaped agglomerations were observed at the laser power greater than that of the optimum condition for the (100)-oriented grain-boundary free film growth.