The 70th JSAP Spring Meeting 2023

Presentation information

Oral presentation

7 Beam Technology and Nanofabrication » 7.2 Applications and technologies of electron beams

[15p-D209-1~12] 7.2 Applications and technologies of electron beams

Wed. Mar 15, 2023 1:30 PM - 4:45 PM D209 (Building No. 11)

Katsuhisa Murakami(AIST), Takafumi Ishida(Nagoya University)

3:15 PM - 3:30 PM

[15p-D209-7] [The 53rd Young Scientist Presentation Award Speech] Development of transfer-free planner-type electron sources based on graphene/h-BN heterostructure

Masaya Yamamoto1,2, Hiromasa Murata2, Masayoshi Nagao2, Hidenori Mimura1, Yoichiro Neo1, Katsuhisa Murakami2 (1.Shizuoka Univ., 2.AIST.)

Keywords:electron source, hexagonal boron nitride(h-BN), graphene

A graphene/h-BN/n-Si stacked planar-type electron source has highly monochromatical electron beams superior to a metal field emitter. In this research, we have developed the direct synthesis method of the h-BN on the Si substrate and transfer-free planar-type electron source based on graphene/h-BN heterostructure. The h-BN layer was evaluated by Raman and optical transmittance spectra. The directly synthesized h-BN had comparable optical properties to commercially available h-BN on Cu foil. The transfer-free graphene/h-BN/n-Si device had the smooth emission area without clacks and wrinkles and achieved high emission current density at 3 mA/cm2.