The 70th JSAP Spring Meeting 2023

Presentation information

Oral presentation

7 Beam Technology and Nanofabrication » 7.2 Applications and technologies of electron beams

[15p-D209-1~12] 7.2 Applications and technologies of electron beams

Wed. Mar 15, 2023 1:30 PM - 4:45 PM D209 (Building No. 11)

Katsuhisa Murakami(AIST), Takafumi Ishida(Nagoya University)

3:45 PM - 4:00 PM

[15p-D209-9] Change in Contact Potential Difference of Reactive Sputter-Deposited Hafnium Nitride Thin Films by Thermal Treatment

Tomoaki Osumi1,2, Masayoshi Nagao2, Yasuhito Gotoh1 (1.Kyoto Univ., 2.AIST)

Keywords:Hafnium nitride, Work function, Reactive sputtering

Hafnium and hafnium nitride (HfN) thin films were deposited by reactive sputtering. Contact potential difference (CPD) of the films were evaluated by Kelvin probe in vacuum. The films were heated at a maximum temperature of 250℃. The difference in CPD before and after thermal treatment was evaluated. Thermal treatment reduced CPD of HfN thin films by 0.6 V. On the other hand, thermal treatment reduced CPD of Hf thin films by 0.4 V.

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