[15p-D209-1~12] 7.2 Applications and technologies of electron beams

[15p-D209-9] Change in Contact Potential Difference of Reactive Sputter-Deposited Hafnium Nitride Thin Films by Thermal Treatment

〇Tomoaki Osumi^1,2, Masayoshi Nagao², Yasuhito Gotoh¹ (1.Kyoto Univ., 2.AIST)

Keywords:Hafnium nitride, Work function, Reactive sputtering

Hafnium and hafnium nitride (HfN) thin films were deposited by reactive sputtering. Contact potential difference (CPD) of the films were evaluated by Kelvin probe in vacuum. The films were heated at a maximum temperature of 250℃. The difference in CPD before and after thermal treatment was evaluated. Thermal treatment reduced CPD of HfN thin films by 0.6 V. On the other hand, thermal treatment reduced CPD of Hf thin films by 0.4 V.