[15p-D411-1~14] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[15p-D411-4] Room Temperature Characteristics of Resistance Switching Memory using Si/CaF₂ Quadruple-Barrier Resonant Tunneling Structure

〇Maiko Hoshino¹, Akinori Ito¹, Yusuke Suzuki¹, Ryoya Usami¹, Kanta Murakami¹, Gensai Tei¹, Masahiro Watanabe¹ (1.Tokyo Tech)

Keywords:resonant tunneling diode, resistive random access memory

Si/CaF₂ heterostructures can be epitaxially grown on Si substrates because of their similar crystal structures and lattice constants. We have proposed and demonstrated a resistance change memory using Si/CaF₂ resonant tunneling structures. In this study, we proposed a resistance change memory using a Si/CaF₂ quadruple barrier structure, which has advantages in structural controllability and reduction of variation compared to spontaneously formed nanocrystals, and both sides of the resonant tunnel structure are responsible for charge injection, retention, and withdrawal operations. The basic memory operations (write, hold, and erase) were confirmed in device fabrication and room temperature I-V characteristics.