Oral presentation

[15p-D411-1~14] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

Wed. Mar 15, 2023 1:30 PM - 5:30 PM D411 (Building No. 11)

Toshihiro Nakaoka(Sophia Univ.), Ryuichi Ohta(NTT), Takayuki Hasegawa(Osaka Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

△ [15p-D411-1] Auto-tuning of a quantum dot with model-based reinforcement learning

〇Chihiro Kondo¹, Raisei Mizokuchi¹, Jun Yoneda¹, Tetsuo Kodera¹ (1.Tokyo Tech. Kodera Lab.)

1:45 PM - 2:00 PM

[15p-D411-2] 【Highlighted Presentation】Demonstration of vertical crystal phase junction transistor

〇Katsuhiro Tomioka¹, Yu Katsumi¹, Shun Kimura¹, Hironori Gamo¹, Junichi Motohisa¹ (1.GS-IST & RCIQE)

2:00 PM - 2:15 PM

[15p-D411-3] Resonant Tunneling Conduction in Closely Stacked InAs Quantum Dots

〇(M2)Yuji Nakazato¹, Naoya Miyashita¹, Kouichi Yamaguchi¹ (1.Univ. Electro-Comm.)

2:15 PM - 2:30 PM

[15p-D411-4] Room Temperature Characteristics of Resistance Switching Memory using Si/CaF₂ Quadruple-Barrier Resonant Tunneling Structure

〇Maiko Hoshino¹, Akinori Ito¹, Yusuke Suzuki¹, Ryoya Usami¹, Kanta Murakami¹, Gensai Tei¹, Masahiro Watanabe¹ (1.Tokyo Tech)

2:30 PM - 2:45 PM

▲ [15p-D411-5] Electron cooling/heating behavior in quantum cascade cooling structures

〇(D)Xiangyu Zhu¹, Chloe Salhani¹, Marc Bescond², Gerald Bastard³, Naomi Nagai¹, Kazuhiko Hirakawa^1,2 (1.IIS/INQIE,Univ. of Tokyo, 2.LIMMS-CNRS, 3.Ecole Normale Superieure)

3:00 PM - 3:15 PM

[15p-D411-6] Polarization dependent optical responses of Cu_2−xS nanodisk superlattices

〇takumi yamada¹, Hirokazu Tahara², Masaaki Saruyama¹, Toshiharu Teranishi¹, Yoshihiko Kanemitsu¹ (1.ICR, Kyoto Univ., 2.Hakubi Ctr., Kyoto Univ.)

3:15 PM - 3:30 PM

[15p-D411-7] Size control and emission efficiency improvement of PbS quantum dots by two-step silica coating using TEOS thermal forced decomposition

〇Haruto Roppongi¹, Kohki Mukai¹ (1.YNU)

3:30 PM - 3:45 PM

△ [15p-D411-8] Magnetic field dependence of the correlation time of hyperfine interaction in semiconductor nanostructures

〇Zirong Li¹, Sota Yamamoto¹, Reina Kaji¹, Satoru Adachi¹ (1.Hokkaido Univ.)

3:45 PM - 4:00 PM

[15p-D411-9] Effects of valence band mixing in (111) single quantum dots: modulations of PL polarization and effective hole g-factor

〇Reina Kaji¹, Jiyuan Chen¹, Satoru Adachi¹ (1.Hokkaido Univ.)

4:00 PM - 4:15 PM

[15p-D411-10] Phonon-assisted optical excitation of erbium ions with surface acoustic wave

〇Ryuichi Ohta¹, Gregoire Lelu¹, Xuejun Xu¹, Tomohiro Inaba¹, Kenichi Hitachi¹, Yoshitaka Taniyasu¹, Haruki Sanada¹, Atsushi Ishizawa², Takehiko Tawara², Katsuya Oguri¹, Hiroshi Yamaguchi¹, Hajime Okamoto¹ (1.NTT BRL, 2.Nihon Univ.)

4:30 PM - 4:45 PM

▲ [15p-D411-11] Diethylzinc passivation of InAs surface quantum dots

〇(DC)Hanif Mohammadi¹, Ronel Roca¹, Hyunju Lee¹, Yoshio Ohshita¹, Naotaka Iwata¹, Itaru Kamiya¹ (1.Toyota tech. inst.)

4:45 PM - 5:00 PM

[15p-D411-12] PL and PR spectra of (100)GaAsBi/GaAs Quantum Wells at room temperature

〇Kotaro Kamakura¹, Shimomura Satoshi¹, Yukutake Yukimasa¹, Zhang Chengming¹ (1.Ehime Univ.)

5:00 PM - 5:15 PM

[15p-D411-13] Observation of exciton quantum beats in a stacked GaAs/AlAs multiple quantum well

〇Osamu Kojima¹, Richard Hogg² (1.Chiba Inst. Tech., 2.Univ. Glasgow)

5:15 PM - 5:30 PM

[15p-D411-14] Coexistence of quantum beat dynamics under applied electric fields in a semiconductor superlattice

〇Takayuki Hasegawa¹ (1.Osaka Inst. Technol.)

Poster presentation

[17p-PB06-1~3] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

Fri. Mar 17, 2023 4:00 PM - 6:00 PM PB06 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

▲ [17p-PB06-1] Passivation on ZnO NWs to enhance the efficiency of PbS/ZnO NW QDSCs

〇(D)YUYAO WEI¹, Chao Ding¹, Mako Nakamura¹, Shuzi Hayase¹, Qing Shen¹ (1.Faculty of Informatics and Engineering, The University of Electro- Communications)

4:00 PM - 6:00 PM

[17p-PB06-2] The electrodeposition of iron in p+ type porous silicon

〇(M2)Shunsuke Sato¹, Lianhua Jin¹, Bernard Gelloz² (1.Univ.Yamanashi, 2.Nagoya Univ.)

4:00 PM - 6:00 PM

▲ [17p-PB06-3] Abnormal Temperature Dependence of Photoluminescence Properties of In-Plane Ultrahigh-Density InAs/InAsSb Quantum-Dot Layer

〇(D)SIMJUI OON¹, Naoya Miyashita¹, Koichi Yamaguchi¹ (1.UEC Tokyo)

Sessions

13 Semiconductors » 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[15p-D411-1~14] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

△ [15p-D411-1] Auto-tuning of a quantum dot with model-based reinforcement learning

[15p-D411-2] 【Highlighted Presentation】Demonstration of vertical crystal phase junction transistor

[15p-D411-3] Resonant Tunneling Conduction in Closely Stacked InAs Quantum Dots

[15p-D411-4] Room Temperature Characteristics of Resistance Switching Memory using Si/CaF₂ Quadruple-Barrier Resonant Tunneling Structure

▲ [15p-D411-5] Electron cooling/heating behavior in quantum cascade cooling structures

[15p-D411-6] Polarization dependent optical responses of Cu_2−xS nanodisk superlattices

[15p-D411-7] Size control and emission efficiency improvement of PbS quantum dots by two-step silica coating using TEOS thermal forced decomposition

△ [15p-D411-8] Magnetic field dependence of the correlation time of hyperfine interaction in semiconductor nanostructures

[15p-D411-9] Effects of valence band mixing in (111) single quantum dots: modulations of PL polarization and effective hole g-factor

[15p-D411-10] Phonon-assisted optical excitation of erbium ions with surface acoustic wave

▲ [15p-D411-11] Diethylzinc passivation of InAs surface quantum dots

[15p-D411-12] PL and PR spectra of (100)GaAsBi/GaAs Quantum Wells at room temperature

[15p-D411-13] Observation of exciton quantum beats in a stacked GaAs/AlAs multiple quantum well

[15p-D411-14] Coexistence of quantum beat dynamics under applied electric fields in a semiconductor superlattice

[17p-PB06-1~3] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

▲ [17p-PB06-1] Passivation on ZnO NWs to enhance the efficiency of PbS/ZnO NW QDSCs

[17p-PB06-2] The electrodeposition of iron in p+ type porous silicon

▲ [17p-PB06-3] Abnormal Temperature Dependence of Photoluminescence Properties of In-Plane Ultrahigh-Density InAs/InAsSb Quantum-Dot Layer

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