[15p-D511-1~11] 15.7 Crystal characterization, impurities and crystal defects

[15p-D511-11] Measurement of carbon concentration in silicon crystal
(26) Standard infrared absorption measurement procedure for single- and poly-Si for industry and science

〇Naohisa Inoue¹, Shuichi Okuda¹, Shuichi Kawamata¹ (1.Osaka Metropolitan Univ. Radiation Research center)

Keywords:silicon crystal, carbon concentration, infrared absorption

We have previously established IR absorption measurement procedure for both single- and poly-Si for both RT and LT down to 1x10^13-14/cm³ by collaboration with advanced Si crystal suppliers and distributed it through the round-robin measurement over the world. In 2019 ²⁸Si sphere replaced the kilogram prototype. Carbon is the most important source of error. Standard procedure, therefore, is important for both industry and science now. Instrumental detection limit (IDL) was established for quality control and spectral detection limit was introduced for R&D and science. They compose the procedure. Sensitivity and reliability of SIMS for non-uniform C distribution is examined.