Oral presentation

[15a-D511-1~11] 15.7 Crystal characterization, impurities and crystal defects

Wed. Mar 15, 2023 9:00 AM - 12:00 PM D511 (Building No. 11)

Atsuhiko Fukuyama(Miyazaki Univ.), Haruo Sudo(GlobalWafers)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[15a-D511-1] Finite Element Analysis for Chladni Patterns on the Virtual Elastic Body

〇Jun Inagaki¹ (1.no affiliation)

9:15 AM - 9:30 AM

[15a-D511-2] Impact of Interstitial Oxygen on Void Reduction Effect of Nitrogen in Czochralski Silicon Single Crystals

〇Akira Sada¹, Yusuke Noda², Koji Sueoka², Kaoru kajiwara³, Masataka Hourai³ (1.Graduate School of Okayama Pref. Univ., 2.Department of Communication Engineering, Okayama Pref. Univ., 3.SUMCO Corporation)

9:30 AM - 9:45 AM

△ [15a-D511-3] ANN potential analysis on clustering of self-interstitial atoms in Si crystal

〇Kazuki Yamanaka¹, Tatsuya Yokoi², Eiji Kamiyama³, Yusuke Noda³, Koji Sueoka³ (1.Graduate School of Engineering, Okayama pref Univ., 2.Graduate School of Engineering, Nagoya Univ., 3.Faculty of Computer Science and Systems Engineering, Okayama pref Univ.)

9:45 AM - 10:00 AM

[15a-D511-4] Calculation of atomic vacancy clusters near Si(100) surface using ANN potential

〇(M2)Masayoshi Sato¹, Tatsuya Yokoi², Eiji Kamiyama³, Yusuke Noda³, Koji Sueoka³ (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Graduate School of Engineering, Nagoya Univ., 3.Faculty of Computer Science and Systems Engineering, Okayama Pref. Univ.)

10:00 AM - 10:15 AM

[15a-D511-5] First-Principles Phase-Field Simulations on Aggregation of Intrinsic Point Defects in Si Single Crystals

〇Yusuke Noda¹, Riichi Kuwahara², Ryoji Sahara³, Koji Sueoka¹, Kaoru Ohno⁴ (1.Okayama Pref. Univ., 2.Dassault Systemes K. K., 3.Nat. Inst. Mater. Sci., 4.Yokohama Nat. Univ.)

10:30 AM - 10:45 AM

[15a-D511-6] Theoretical Study on Binding of Vacancy-Oxygen Complex (VO₄) to Metals in RTP Wafers

〇Hiroya Iwashiro¹, Haruo Sudo¹, Ken Hayakawa¹, Eiji Kamiyama¹ (1.Global Wafers Japan Co., Ltd.)

10:45 AM - 11:00 AM

[15a-D511-7] Matching of SiO₂ crystal structures to a Si crystal

〇Eiji Kamiyama^1,2, Koji Sueoka² (1.GlobalWafers Japan Co., Ltd., 2.Okayama Pref. Univ.)

11:00 AM - 11:15 AM

[15a-D511-8] Gettering Mechanisms of Silicon Hydride and Hydrocarbon Hybrid-Molecular-Ion-Implanted Silicon Epitaxial Wafer

〇Ryo Hirose¹, Ayumi Onaka-Masada¹, Ryosuke Okuyama¹, Takeshi Kadono¹, Koji Kobayashi¹, Akihiro Suzuki¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

11:15 AM - 11:30 AM

[15a-D511-9] Thermal Shrinkage Behavior of Extended Defects Formed in Silicon Hydride and Hydrocarbon Hybrid-Molecular-Ion-Implanted Silicon Epitaxial Wafer

〇Akihiro Suzuki¹, Ryosuke Okuyama¹, Takeshi Kadono¹, Koji Kobayashi¹, Ryo Hirose¹, Ayumi Masada¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

11:30 AM - 11:45 AM

[15a-D511-10] Analysis of Passivation Effect on SiO₂/Si Interface State Defects of Silicon Hydride and Hydrocarbon Hybrid-Molecular-Ion-Implanted Silicon Epitaxial Wafer

〇Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Akihiro Suzuki¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Ryo Hirose¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

11:45 AM - 12:00 PM

[15a-D511-11] TCAD Simulation Analysis of Recrystallization Behavior on Hydrocarbon-Molecular-Ion-Implanted Silicon wafer Surface

〇kouji kobayashi¹, Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Ryo Hirose¹, Akihiro Suzuki¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

Oral presentation

[15p-D511-1~11] 15.7 Crystal characterization, impurities and crystal defects

Wed. Mar 15, 2023 1:30 PM - 4:45 PM D511 (Building No. 11)

Hidetoshi Suzuki(Miyazaki Univ.), Eiji Kamiyama(GlobalWafers Japan)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:00 PM

[15p-D511-1] [The 1st Diversity & Inclusion Awards Outstanding Female Researchers Award Speech] Elucidation of the crystal growth mechanism of organic crystals and biominerals for the development of crystal growth technology

〇Mihoko Maruyama^1,2 (1.Osaka Univ., 2.Kyoto Pref. Univ.)

2:00 PM - 2:15 PM

△ [15p-D511-2] Relationship between Dislocation and Wire Cross-sectional Shape in Si Wire Formation by Anodization

〇(B)Miyuki Kochi¹, Ayaho Midori¹, Toshiaki Suzuki¹, Masaaki Niwa¹, Mitsuya Motohashi¹ (1.Tokyo Denki Univ.)

2:15 PM - 2:30 PM

▼ [15p-D511-3] A nanoXRD Based Analysis on HVPE GaN Structure Combined with Machine Learning

〇(DC)Zhendong WU¹, Yudai Nakanish¹, Yusuke Hayashi¹, Tetsuya Tohei¹, Yasuhiko Imai², Kazushi Sumitani², Shigeru Kimura², Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.JASRI)

2:30 PM - 2:45 PM

△ [15p-D511-4] Hydrogen localization effects on strain relaxation and crystallographic tilting in SiGe

〇(M2)Mitsuki Kano¹, Satoru Miyamoto¹, Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Nagoya Univ.)

2:45 PM - 3:00 PM

[15p-D511-5] Lattice parameter change of α-MoO3 by heat treatment

〇Daichi Terasawa¹, Zhao Jiaming¹, Suematsu Hisayuki¹, Thi Mai Dung¹, Nakayama Tadachika¹ (1.Nagaoka univ of tech.)

3:00 PM - 3:15 PM

[15p-D511-6] Geometric surface structure of high-dose implanted/annealed SiC

〇Kotaro Ishiji¹, Makoto Arita², Mariko Adachi³, Yuichi Wada⁴, Yasuhiro Yamada⁴, Tsutomu Araki⁴ (1.SAGA-LS, 2.Kyushu Univ., 3.Nanophoton, 4.Ritsumeikan Univ.)

3:30 PM - 3:45 PM

[15p-D511-7] Dislocation generation from asymmetric tilt boundaries during cast-growth of silicon

〇Yutaka Ohno¹, Hideto Yoshida², Tatsuya Yokoi³, Kenta Yamakoshi³, Takuto Kojima⁴, Katsuyuki Matsunaga³, Patricia Krenckel⁵, Stephan Riepe⁵, Noritaka Usami³ (1.IMR, Tohoku Univ., 2.SANKEN, Osaka Univ., 3.GSE, Nagoya Univ., 4.GSI, Nagoya Univ., 5.Fraunhofer ISE)

3:45 PM - 4:00 PM

[15p-D511-8] Formation of asymmetric silicon tilt boundaries acting as dislocation sources

〇Yutaka Ohno¹, Hikaru Saito², Liang Jianbo³, Tatsuya Yokoi⁴, Katsuyuki Matsunaga⁴, Naoteru Shigekawa³, Koji Inoue¹, Yasuyoshi Nagai¹, Satoshi Hata⁵ (1.IMR, Tohoku Univ., 2.IMCE, Kyushu Univ., 3.GSE, OMU, 4.GSE, Nagoya Univ., 5.IGSES, Kyushu Univ.)

4:00 PM - 4:15 PM

[15p-D511-9] Quality of silicon substrate and point defects (9) Non-uniformity of lattice parameter and carbon concentration in Avogadro crystal

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ. Radiation Research Center)

4:15 PM - 4:30 PM

[15p-D511-10] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal
(22) Standard measurement procedure of N-complexes

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Metropolitan Univ. Radiation Research center)

4:30 PM - 4:45 PM

[15p-D511-11] Measurement of carbon concentration in silicon crystal
(26) Standard infrared absorption measurement procedure for single- and poly-Si for industry and science

〇Naohisa Inoue¹, Shuichi Okuda¹, Shuichi Kawamata¹ (1.Osaka Metropolitan Univ. Radiation Research center)

Poster presentation

[16p-PA06-1~2] 15.7 Crystal characterization, impurities and crystal defects

Thu. Mar 16, 2023 1:30 PM - 3:30 PM PA06 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[16p-PA06-1] Development of photoluminescence imaging equipment using UVC LED

〇(M1)Ami Hitomi¹, Toru Katsumata^1,2, Hiroaki Aizawa¹ (1.Toyo Univ., 2.Toyo Inst.)

1:30 PM - 3:30 PM

[16p-PA06-2] Fabrication of heavily-doped p-type Si layer for semiconductor based spin devices

〇Mizue Ishikawa¹ (1.Nihon Univ. College of Engineering)

Sessions

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[15a-D511-1~11] 15.7 Crystal characterization, impurities and crystal defects

[15a-D511-1] Finite Element Analysis for Chladni Patterns on the Virtual Elastic Body

[15a-D511-2] Impact of Interstitial Oxygen on Void Reduction Effect of Nitrogen in Czochralski Silicon Single Crystals

△ [15a-D511-3] ANN potential analysis on clustering of self-interstitial atoms in Si crystal

[15a-D511-4] Calculation of atomic vacancy clusters near Si(100) surface using ANN potential

[15a-D511-5] First-Principles Phase-Field Simulations on Aggregation of Intrinsic Point Defects in Si Single Crystals

[15a-D511-6] Theoretical Study on Binding of Vacancy-Oxygen Complex (VO₄) to Metals in RTP Wafers

[15a-D511-7] Matching of SiO₂ crystal structures to a Si crystal

[15a-D511-8] Gettering Mechanisms of Silicon Hydride and Hydrocarbon Hybrid-Molecular-Ion-Implanted Silicon Epitaxial Wafer

[15a-D511-9] Thermal Shrinkage Behavior of Extended Defects Formed in Silicon Hydride and Hydrocarbon Hybrid-Molecular-Ion-Implanted Silicon Epitaxial Wafer

[15a-D511-10] Analysis of Passivation Effect on SiO₂/Si Interface State Defects of Silicon Hydride and Hydrocarbon Hybrid-Molecular-Ion-Implanted Silicon Epitaxial Wafer

[15a-D511-11] TCAD Simulation Analysis of Recrystallization Behavior on Hydrocarbon-Molecular-Ion-Implanted Silicon wafer Surface

[15p-D511-1~11] 15.7 Crystal characterization, impurities and crystal defects

[15p-D511-1] [The 1st Diversity & Inclusion Awards Outstanding Female Researchers Award Speech] Elucidation of the crystal growth mechanism of organic crystals and biominerals for the development of crystal growth technology

△ [15p-D511-2] Relationship between Dislocation and Wire Cross-sectional Shape in Si Wire Formation by Anodization

▼ [15p-D511-3] A nanoXRD Based Analysis on HVPE GaN Structure Combined with Machine Learning

△ [15p-D511-4] Hydrogen localization effects on strain relaxation and crystallographic tilting in SiGe

[15p-D511-5] Lattice parameter change of α-MoO3 by heat treatment

[15p-D511-6] Geometric surface structure of high-dose implanted/annealed SiC

[15p-D511-7] Dislocation generation from asymmetric tilt boundaries during cast-growth of silicon

[15p-D511-8] Formation of asymmetric silicon tilt boundaries acting as dislocation sources

[15p-D511-9] Quality of silicon substrate and point defects (9) Non-uniformity of lattice parameter and carbon concentration in Avogadro crystal

[15p-D511-10] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal
(22) Standard measurement procedure of N-complexes

[15p-D511-11] Measurement of carbon concentration in silicon crystal
(26) Standard infrared absorption measurement procedure for single- and poly-Si for industry and science

[16p-PA06-1~2] 15.7 Crystal characterization, impurities and crystal defects

[16p-PA06-1] Development of photoluminescence imaging equipment using UVC LED

[16p-PA06-2] Fabrication of heavily-doped p-type Si layer for semiconductor based spin devices

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