[15a-D511-1~11] 15.7 Crystal characterization, impurities and crystal defects

[15a-D511-6] Theoretical Study on Binding of Vacancy-Oxygen Complex (VO₄) to Metals in RTP Wafers

〇Hiroya Iwashiro¹, Haruo Sudo¹, Ken Hayakawa¹, Eiji Kamiyama¹ (1.Global Wafers Japan Co., Ltd.)

Keywords:VO4, First principles calculation, binding energy

The objective of this study was to investigate the possibility of vacancy-oxygen complexes (VO₄), which are presumed to be generated in the rapid thermal process (RTP) wafers, exhibiting a gettering effect on typical metal impurities (Al, Fe, Cu, and Ni) in semiconductor manufacturing. The binding energy (E_b) was obtained using the first-principles calculation. The calculated E_b of metastable VO₄ and metals ranged between 0.9 and 1.4 eV, which is higher than that of Fe-B (0.65 eV).